GaAs device modelling for design and application

Anthony E. Parker; David J. Skellern

GaAs device modelling for design and application

Anthony E. Parker^*, David J. Skellern

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Device characteristics included in available MESFET models are reviewed, and model extensions for improved accuracy over a wide range of conditions are proposed. Use of the model is illustrated in the context of a basic analog amplifier and analog sub-circuit. The application of other modeling techniques for mixed-mode (analog and digital) systems is briefly discussed.

Original language	English
Pages (from-to)	1837-1840
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	3
Publication status	Published - 1991

Cite this

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title = "GaAs device modelling for design and application",

abstract = "Device characteristics included in available MESFET models are reviewed, and model extensions for improved accuracy over a wide range of conditions are proposed. Use of the model is illustrated in the context of a basic analog amplifier and analog sub-circuit. The application of other modeling techniques for mixed-mode (analog and digital) systems is briefly discussed.",

author = "Parker, \{Anthony E.\} and Skellern, \{David J.\}",

year = "1991",

language = "English",

volume = "3",

pages = "1837--1840",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - GaAs device modelling for design and application

AU - Parker, Anthony E.

AU - Skellern, David J.

PY - 1991

Y1 - 1991

N2 - Device characteristics included in available MESFET models are reviewed, and model extensions for improved accuracy over a wide range of conditions are proposed. Use of the model is illustrated in the context of a basic analog amplifier and analog sub-circuit. The application of other modeling techniques for mixed-mode (analog and digital) systems is briefly discussed.

AB - Device characteristics included in available MESFET models are reviewed, and model extensions for improved accuracy over a wide range of conditions are proposed. Use of the model is illustrated in the context of a basic analog amplifier and analog sub-circuit. The application of other modeling techniques for mixed-mode (analog and digital) systems is briefly discussed.

UR - https://www.scopus.com/pages/publications/0026372853

M3 - Article

AN - SCOPUS:0026372853

SN - 0271-4310

VL - 3

SP - 1837

EP - 1840

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

ER -

GaAs device modelling for design and application

Abstract

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