GaAs e band radio chip-set

Jabra Tarazi; Melissa C. Rodriguez; Anna Dadello; Maccrae G. McCulloch; Anthony P. Fattorini; Steve Hwang; Ryan Clement; Anthony E. Parker; James T. Harvey; Simon J. Mahon

doi:10.1109/CSICS.2013.6659228

GaAs e band radio chip-set

Jabra Tarazi, Melissa C. Rodriguez, Anna Dadello, Maccrae G. McCulloch, Anthony P. Fattorini, Steve Hwang, Ryan Clement, Anthony E. Parker, James T. Harvey, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

3 Citations (Scopus)

Abstract

A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.

Original language	English
Title of host publication	2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479905836
ISBN (Print)	9781479905829
DOIs	https://doi.org/10.1109/CSICS.2013.6659228
Publication status	Published - 8 Nov 2013
Event	2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Monterey, CA, United States Duration: 13 Oct 2013 → 16 Oct 2013

Other

Other	2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013
Country	United States
City	Monterey, CA
Period	13/10/13 → 16/10/13

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10.1109/CSICS.2013.6659228

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Tarazi, J., Rodriguez, M. C., Dadello, A., McCulloch, M. G., Fattorini, A. P., Hwang, S., ... Mahon, S. J. (2013). GaAs e band radio chip-set. In 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013 (pp. 1-4). [6659228] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CSICS.2013.6659228

Tarazi, Jabra ; Rodriguez, Melissa C. ; Dadello, Anna ; McCulloch, Maccrae G. ; Fattorini, Anthony P. ; Hwang, Steve ; Clement, Ryan ; Parker, Anthony E. ; Harvey, James T. ; Mahon, Simon J. / GaAs e band radio chip-set. 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2013. pp. 1-4

@inproceedings{96ebb9dd014c4288b51aaff0b986261a,

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abstract = "A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.",

author = "Jabra Tarazi and Rodriguez, {Melissa C.} and Anna Dadello and McCulloch, {Maccrae G.} and Fattorini, {Anthony P.} and Steve Hwang and Ryan Clement and Parker, {Anthony E.} and Harvey, {James T.} and Mahon, {Simon J.}",

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doi = "10.1109/CSICS.2013.6659228",

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booktitle = "2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013",

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Tarazi, J, Rodriguez, MC, Dadello, A, McCulloch, MG, Fattorini, AP, Hwang, S, Clement, R, Parker, AE, Harvey, JT & Mahon, SJ 2013, GaAs e band radio chip-set. in 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013., 6659228, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013, Monterey, CA, United States, 13/10/13. https://doi.org/10.1109/CSICS.2013.6659228

GaAs e band radio chip-set. / Tarazi, Jabra; Rodriguez, Melissa C.; Dadello, Anna; McCulloch, Maccrae G.; Fattorini, Anthony P.; Hwang, Steve; Clement, Ryan; Parker, Anthony E.; Harvey, James T.; Mahon, Simon J.

2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1-4 6659228.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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AU - Tarazi, Jabra

AU - Rodriguez, Melissa C.

AU - Dadello, Anna

AU - McCulloch, Maccrae G.

AU - Fattorini, Anthony P.

AU - Hwang, Steve

AU - Clement, Ryan

AU - Parker, Anthony E.

AU - Harvey, James T.

AU - Mahon, Simon J.

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N2 - A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.

AB - A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3 of 5 dBm. For the up-converter, the measured conversion gain exceeds 10 dB and the OIP3 is approximately 26 dBm. The power amplifier has an average measured output power of 25.4 dBm and exceeds 24.5 dBm over the band. This amplifier has a measured small signal gain of 20 dB, OIP3 of approximately 32 dBm and the input and output return losses exceed 15 dB. The saturated output exceeds previous results for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. To the authors' knowledge this is the highest performance E-band full chipset solution realized in a commercially available GaAs foundry.

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BT - 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

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Tarazi J, Rodriguez MC, Dadello A, McCulloch MG, Fattorini AP, Hwang S et al. GaAs e band radio chip-set. In 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 1-4. 6659228 https://doi.org/10.1109/CSICS.2013.6659228