GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength

A. A. Toropov; V. A. Solov'ev; B. Ya Mel'tser; Ya V. Terent'ev; R. N. Kyutt; A. N. Semenov; S. V. Ivanov; P. S. Kop'ev; null Motlan; E. M. Goldys

doi:10.1039/b104183p

GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength

A. A. Toropov, V. A. Solov'ev, B. Ya Mel'tser, Ya V. Terent'ev, R. N. Kyutt, A. N. Semenov, S. V. Ivanov, P. S. Kop'ev, Motlan, E. M. Goldys

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Abstract

We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.

Original language	English
Pages (from-to)	309-311
Number of pages	3
Journal	Journal of Materials Chemistry
Volume	12
Issue number	2
DOIs	https://doi.org/10.1039/b104183p
Publication status	Published - 2002

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@article{458d605c30cd4f59a5e9a254def149db,

title = "GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength",

abstract = "We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.",

author = "Toropov, {A. A.} and Solov'ev, {V. A.} and Mel'tser, {B. Ya} and Terent'ev, {Ya V.} and Kyutt, {R. N.} and Semenov, {A. N.} and Ivanov, {S. V.} and Kop'ev, {P. S.} and Motlan and Goldys, {E. M.}",

year = "2002",

doi = "10.1039/b104183p",

language = "English",

volume = "12",

pages = "309--311",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "2",

}

TY - JOUR

T1 - GaAs in gaSb

T2 - A new type of heterostructure emitting at 2 μm wavelength

AU - Toropov, A. A.

AU - Solov'ev, V. A.

AU - Mel'tser, B. Ya

AU - Terent'ev, Ya V.

AU - Kyutt, R. N.

AU - Semenov, A. N.

AU - Ivanov, S. V.

AU - Kop'ev, P. S.

AU - Motlan, null

AU - Goldys, E. M.

PY - 2002

Y1 - 2002

N2 - We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.

AB - We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.

UR - http://www.scopus.com/inward/record.url?scp=0036159052&partnerID=8YFLogxK

U2 - 10.1039/b104183p

DO - 10.1039/b104183p

M3 - Article

AN - SCOPUS:0036159052

VL - 12

SP - 309

EP - 311

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 2

ER -

GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength

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