GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength

A. A. Toropov, V. A. Solov'ev, B. Ya Mel'tser, Ya V. Terent'ev, R. N. Kyutt, A. N. Semenov, S. V. Ivanov, P. S. Kop'ev, Motlan, E. M. Goldys

    Research output: Contribution to journalArticlepeer-review


    We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.

    Original languageEnglish
    Pages (from-to)309-311
    Number of pages3
    JournalJournal of Materials Chemistry
    Issue number2
    Publication statusPublished - 2002


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