Abstract
We report growth as well as optical and structural studies of a new type of a GaAs/GaSb heterostructure, with 1-3 monolayer thick GaAs layers embedded within unstrained GaSb. In such structures the GaAs layer is under tensile stress, in contrast to the situation in which self-organized growth of quantum dots is commonly observed. The structure emits light in the 2 μm wavelength range. The emission characteristics are explained by a combination of quantum confinement effects and localization on nanoscale potential fluctuations.
Original language | English |
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Pages (from-to) | 309-311 |
Number of pages | 3 |
Journal | Journal of Materials Chemistry |
Volume | 12 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 |