GaAs in GaSb

Strained nanostructures for mid-infrared optoelectronics

V. A. Solov’ev*, A. A. Toropov, B. Ya Meltser, Ya A. Terent’ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, M. Motlan, E. M. Goldys, P. S. Kop’ev

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures with self-assembled quantum dots, GaAs layers in GaAs/GaSb structures are subject to elastic tensile stresses due to 7% lattice mismatch. The structures exhibit intense photoluminescence in the 2 μm region at low temperatures. Quantum-dimensional islands are formed in the structure at a nominal GaAs layer thickness exceeding 1.5 monolayers. The band alignment of the structures is of type II.

Original languageEnglish
Pages (from-to)816-820
Number of pages5
JournalSemiconductors
Volume36
Issue number7
DOIs
Publication statusPublished - 1 Jul 2002

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