GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics

V. A. Solov’ev; A. A. Toropov; B. Ya Meltser; Ya A. Terent’ev; R. N. Kyutt; A. A. Sitnikova; A. N. Semenov; S. V. Ivanov; M. Motlan; E. M. Goldys; P. S. Kop’ev

doi:10.1134/1.1493755

GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics

V. A. Solov’ev^*, A. A. Toropov, B. Ya Meltser, Ya A. Terent’ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, M. Motlan, E. M. Goldys, P. S. Kop’ev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures with self-assembled quantum dots, GaAs layers in GaAs/GaSb structures are subject to elastic tensile stresses due to 7% lattice mismatch. The structures exhibit intense photoluminescence in the 2 μm region at low temperatures. Quantum-dimensional islands are formed in the structure at a nominal GaAs layer thickness exceeding 1.5 monolayers. The band alignment of the structures is of type II.

Original language	English
Pages (from-to)	816-820
Number of pages	5
Journal	Semiconductors
Volume	36
Issue number	7
DOIs	https://doi.org/10.1134/1.1493755
Publication status	Published - 1 Jul 2002

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title = "GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics",

abstract = "Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures with self-assembled quantum dots, GaAs layers in GaAs/GaSb structures are subject to elastic tensile stresses due to 7% lattice mismatch. The structures exhibit intense photoluminescence in the 2 μm region at low temperatures. Quantum-dimensional islands are formed in the structure at a nominal GaAs layer thickness exceeding 1.5 monolayers. The band alignment of the structures is of type II.",

author = "Solov{\textquoteright}ev, {V. A.} and Toropov, {A. A.} and Meltser, {B. Ya} and Terent{\textquoteright}ev, {Ya A.} and Kyutt, {R. N.} and Sitnikova, {A. A.} and Semenov, {A. N.} and Ivanov, {S. V.} and M. Motlan and Goldys, {E. M.} and Kop{\textquoteright}ev, {P. S.}",

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T2 - Strained nanostructures for mid-infrared optoelectronics

AU - Solov’ev, V. A.

AU - Toropov, A. A.

AU - Meltser, B. Ya

AU - Terent’ev, Ya A.

AU - Kyutt, R. N.

AU - Sitnikova, A. A.

AU - Semenov, A. N.

AU - Ivanov, S. V.

AU - Motlan, M.

AU - Goldys, E. M.

AU - Kop’ev, P. S.

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AB - Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures with self-assembled quantum dots, GaAs layers in GaAs/GaSb structures are subject to elastic tensile stresses due to 7% lattice mismatch. The structures exhibit intense photoluminescence in the 2 μm region at low temperatures. Quantum-dimensional islands are formed in the structure at a nominal GaAs layer thickness exceeding 1.5 monolayers. The band alignment of the structures is of type II.

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GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics

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