@inproceedings{69ac4cdb483a46fa88036c0b1279150d,
title = "GaAs MMIC pHEMT gate metal thermometry",
abstract = "A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.",
keywords = "Electrothermal effects, gate leakage, HEMTs, MMICs, temperature measurement, thermal resistance, SEMICONDUCTOR-DEVICES, THERMAL-RESISTANCE, TEMPERATURE",
author = "Schwitter, {Bryan K.} and Parker, {Anthony E.} and Albahrani, {Sayed A.} and Fattorini, {Anthony P.} and Heimlich, {Michael C.}",
year = "2013",
doi = "10.1109/MWSYM.2013.6697358",
language = "English",
isbn = "9781467361750",
series = "IEEE MTT-S International Microwave Symposium",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1--4",
booktitle = "2013 IEEE MTT-S International microwave symposium digest (IMS)",
address = "United States",
note = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 ; Conference date: 02-06-2013 Through 07-06-2013",
}