GaAs MMIC pHEMT gate metal thermometry

Bryan K. Schwitter*, Anthony E. Parker, Sayed A. Albahrani, Anthony P. Fattorini, Michael C. Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International microwave symposium digest (IMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467361767, 9781467361774 , 9781467361743
ISBN (Print)9781467361750
DOIs
Publication statusPublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium
PublisherIEEE
ISSN (Print)0149-645X

Other

Other2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
CountryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • Electrothermal effects
  • gate leakage
  • HEMTs
  • MMICs
  • temperature measurement
  • thermal resistance
  • SEMICONDUCTOR-DEVICES
  • THERMAL-RESISTANCE
  • TEMPERATURE

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