Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

K. S A Butcher*, Afifuddin, T. L. Tansley, N. Brack, P. J. Pigram, H. Timmers, K. E. Prince, R. G. Elliman

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.

Original languageEnglish
Pages (from-to)18-23
Number of pages6
JournalApplied Surface Science
Volume230
Issue number1-4
DOIs
Publication statusPublished - 31 May 2004

Keywords

  • Argon ion milling
  • Gallium nitride
  • Ultra-high vacuum

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