Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

K. S A Butcher*, Afifuddin, T. L. Tansley, N. Brack, P. J. Pigram, H. Timmers, K. E. Prince, R. G. Elliman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.

Original languageEnglish
Pages (from-to)18-23
Number of pages6
JournalApplied Surface Science
Volume230
Issue number1-4
DOIs
Publication statusPublished - 31 May 2004

Keywords

  • Argon ion milling
  • Gallium nitride
  • Ultra-high vacuum

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