Gallium nitride film growth using a plasma based migration enhanced afterglow chemical vapor deposition system

K. Scott A Butcher*, Brad W. Kemp, Ilian B. Hristov, Penka Terziyska, Peter W. Binsted, Dimiter Alexandrov

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.

Original languageEnglish
Article number01AF02
Pages (from-to)1-5
Number of pages5
JournalJapanese Journal of Applied Physics
Volume51
Issue number1 PART 2
DOIs
Publication statusPublished - 20 Jan 2012
Externally publishedYes

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