Gallium nitride film growth using a plasma based migration enhanced afterglow chemical vapor deposition system

K. Scott A Butcher; Brad W. Kemp; Ilian B. Hristov; Penka Terziyska; Peter W. Binsted; Dimiter Alexandrov

doi:10.1143/JJAP.51.01AF02

Gallium nitride film growth using a plasma based migration enhanced afterglow chemical vapor deposition system

K. Scott A Butcher^*, Brad W. Kemp, Ilian B. Hristov, Penka Terziyska, Peter W. Binsted, Dimiter Alexandrov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.

Original language	English
Article number	01AF02
Pages (from-to)	1-5
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.01AF02
Publication status	Published - 20 Jan 2012
Externally published	Yes

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abstract = "Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.",

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AU - Binsted, Peter W.

AU - Alexandrov, Dimiter

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N2 - Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.

AB - Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.

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Gallium nitride film growth using a plasma based migration enhanced afterglow chemical vapor deposition system

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