Gallium nitride power electronic devices and circuits: A review

Graham E. Town*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)

Abstract

Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.

Original languageEnglish
Title of host publication2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-3
Number of pages3
Volume2015-August
ISBN (Electronic)9781479944033
DOIs
Publication statusPublished - 14 Aug 2015
Event11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
Duration: 9 Jun 201512 Jun 2015

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
CountryAustralia
CitySydney
Period9/06/1512/06/15

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