Gallium nitride power electronic devices and circuits: A review

Graham E. Town

doi:10.1109/PEDS.2015.7203483

Gallium nitride power electronic devices and circuits: A review

Graham E. Town^*

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

10 Citations (Scopus)

Abstract

Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.

Original language	English
Title of host publication	2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-3
Number of pages	3
Volume	2015-August
ISBN (Electronic)	9781479944033
DOIs	https://doi.org/10.1109/PEDS.2015.7203483
Publication status	Published - 14 Aug 2015
Event	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia Duration: 9 Jun 2015 → 12 Jun 2015

Other

Other	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
Country/Territory	Australia
City	Sydney
Period	9/06/15 → 12/06/15

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10.1109/PEDS.2015.7203483

Cite this

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title = "Gallium nitride power electronic devices and circuits: A review",

abstract = "Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.",

author = "Town, \{Graham E.\}",

year = "2015",

month = aug,

day = "14",

doi = "10.1109/PEDS.2015.7203483",

language = "English",

volume = "2015-August",

pages = "1--3",

booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",

}

Town, GE 2015, Gallium nitride power electronic devices and circuits: A review. in 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. vol. 2015-August, 7203483, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-3, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 9/06/15. https://doi.org/10.1109/PEDS.2015.7203483

Gallium nitride power electronic devices and circuits: A review. / Town, Graham E.
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Vol. 2015-August Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-3 7203483.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Gallium nitride power electronic devices and circuits

T2 - 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015

AU - Town, Graham E.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.

AB - Gallium-nitride is an emerging power semiconductor technology with considerable promise for applications requiring compact and efficient power conversion at competitive cost. In this paper gallium-nitride power electronic devices, circuits, and applications are reviewed and compared in terms of device specifications, circuit topologies, and cost.

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DO - 10.1109/PEDS.2015.7203483

M3 - Conference proceeding contribution

AN - SCOPUS:84951940380

VL - 2015-August

SP - 1

EP - 3

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 9 June 2015 through 12 June 2015

ER -

Gallium nitride power electronic devices and circuits: A review

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