Gamma induced centres in liquid phase epitaxial gallium arsenide

Dimitri Alexiev, Trevor Lionel Tansley, Kenneth Scott Alexander Butcher

    Research output: Contribution to journalArticlepeer-review


    Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

    Original languageEnglish
    Pages (from-to)166-167
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Issue numberPart 1, No. 1A
    Publication statusPublished - 1993


    • annealing
    • deep levels
    • DLTS
    • gamma and electron irradiation
    • lattice imperfections
    • LPE-GaAs
    • radiation damage


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