Gamma induced centres in liquid phase epitaxial gallium arsenide

Dimitri Alexiev, Trevor Lionel Tansley, Kenneth Scott Alexander Butcher

Research output: Contribution to journalArticlepeer-review


Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

Original languageEnglish
Pages (from-to)166-167
Number of pages2
JournalJapanese Journal of Applied Physics
Issue numberPart 1, No. 1A
Publication statusPublished - 1993


  • annealing
  • deep levels
  • DLTS
  • gamma and electron irradiation
  • lattice imperfections
  • LPE-GaAs
  • radiation damage


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