Abstract
Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.
Original language | English |
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Pages (from-to) | 166-167 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics |
Volume | 32 |
Issue number | Part 1, No. 1A |
DOIs | |
Publication status | Published - 1993 |
Keywords
- annealing
- deep levels
- DLTS
- gamma and electron irradiation
- lattice imperfections
- LPE-GaAs
- radiation damage