Gamma induced centres in liquid phase epitaxial gallium arsenide

Dimitri Alexiev; Trevor Lionel Tansley; Kenneth Scott Alexander Butcher

doi:10.1143/JJAP.32.166

Gamma induced centres in liquid phase epitaxial gallium arsenide

Dimitri Alexiev, Trevor Lionel Tansley, Kenneth Scott Alexander Butcher

Research output: Contribution to journal › Article › peer-review

Abstract

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

Original language	English
Pages (from-to)	166-167
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	Part 1, No. 1A
DOIs	https://doi.org/10.1143/JJAP.32.166
Publication status	Published - 1993

Keywords

annealing
deep levels
DLTS
gamma and electron irradiation
lattice imperfections
LPE-GaAs
radiation damage

Access to Document

10.1143/JJAP.32.166

Cite this

@article{c81c25878c8b430f9e62b4d22f9976ca,

title = "Gamma induced centres in liquid phase epitaxial gallium arsenide",

abstract = "Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.",

keywords = "annealing, deep levels, DLTS, gamma and electron irradiation, lattice imperfections, LPE-GaAs, radiation damage",

author = "Dimitri Alexiev and Tansley, \{Trevor Lionel\} and \{Alexander Butcher\}, \{Kenneth Scott\}",

year = "1993",

doi = "10.1143/JJAP.32.166",

language = "English",

volume = "32",

pages = "166--167",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics Publishing",

number = "Part 1, No. 1A",

}

TY - JOUR

T1 - Gamma induced centres in liquid phase epitaxial gallium arsenide

AU - Alexiev, Dimitri

AU - Tansley, Trevor Lionel

AU - Alexander Butcher, Kenneth Scott

PY - 1993

Y1 - 1993

N2 - Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

AB - Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

KW - annealing

KW - deep levels

KW - DLTS

KW - gamma and electron irradiation

KW - lattice imperfections

KW - LPE-GaAs

KW - radiation damage

UR - https://www.scopus.com/pages/publications/0027148150

U2 - 10.1143/JJAP.32.166

DO - 10.1143/JJAP.32.166

M3 - Article

AN - SCOPUS:0027148150

SN - 0021-4922

VL - 32

SP - 166

EP - 167

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - Part 1, No. 1A

ER -

Gamma induced centres in liquid phase epitaxial gallium arsenide

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this