GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications

Anthony E. Parker*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.

Original languageEnglish
Title of host publicationProceedings of the 2020 IEEE/MTT-S International Microwave Symposium
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages424-427
Number of pages4
ISBN (Electronic)9781728168159
ISBN (Print)9781728168166
DOIs
Publication statusPublished - 2020
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 4 Aug 20206 Aug 2020

Publication series

Name
ISSN (Print)0149-645X
ISSN (Electronic)2576-721

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
CountryUnited States
CityVirtual, Los Angeles
Period4/08/206/08/20

Keywords

  • Circuit simulation
  • Charge Model
  • HEMTs

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