GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications

Anthony E. Parker; Simon J. Mahon

doi:10.1109/BCICTS54660.2023.10310982

GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications

Anthony E. Parker, Simon J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

1 Citation (Scopus)

Abstract

An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.

Original language	English
Title of host publication	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	300-303
Number of pages	4
ISBN (Electronic)	9798350307641
ISBN (Print)	9798350307658
DOIs	https://doi.org/10.1109/BCICTS54660.2023.10310982
Publication status	Published - 2023
Event	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 - Monterey, United States Duration: 16 Oct 2023 → 18 Oct 2023

Publication series

Name
ISSN (Print)	2831-4972
ISSN (Electronic)	2831-4999

Conference

Conference	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023
Country/Territory	United States
City	Monterey
Period	16/10/23 → 18/10/23

Access to Document

10.1109/BCICTS54660.2023.10310982

Cite this

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title = "GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications",

abstract = "An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.",

author = "Parker, \{Anthony E.\} and Mahon, \{Simon J.\}",

year = "2023",

doi = "10.1109/BCICTS54660.2023.10310982",

language = "English",

isbn = "9798350307658",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "300--303",

booktitle = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

address = "United States",

note = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 ; Conference date: 16-10-2023 Through 18-10-2023",

}

Parker, AE & Mahon, SJ 2023, GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications. in 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 300-303, 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, United States, 16/10/23. https://doi.org/10.1109/BCICTS54660.2023.10310982

GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications. / Parker, Anthony E.; Mahon, Simon J.
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 300-303.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications

AU - Parker, Anthony E.

AU - Mahon, Simon J.

PY - 2023

Y1 - 2023

N2 - An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.

AB - An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.

UR - https://www.scopus.com/pages/publications/85179523241

U2 - 10.1109/BCICTS54660.2023.10310982

DO - 10.1109/BCICTS54660.2023.10310982

M3 - Conference proceeding contribution

AN - SCOPUS:85179523241

SN - 9798350307658

SP - 300

EP - 303

BT - 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023

Y2 - 16 October 2023 through 18 October 2023

ER -

GaN and GaAs HEMT channel charge model for nonlinear microwave and RF applications

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