GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications

Anthony E. Parker

doi:10.1109/APMC52720.2021.9661735

GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications

Anthony E. Parker^*

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior highorder linearity and power limit prediction critical for wireless applications.

Original language	English
Title of host publication	2021 IEEE Asia-Pacific Microwave Conference (APMC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	94-96
Number of pages	3
ISBN (Electronic)	9781665437820
ISBN (Print)	9781665437837
DOIs	https://doi.org/10.1109/APMC52720.2021.9661735
Publication status	Published - 2021
Event	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 - Virtual, Online, Australia Duration: 28 Nov 2021 → 1 Dec 2021

Conference

Conference	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021
Country/Territory	Australia
City	Virtual, Online
Period	28/11/21 → 1/12/21

Access to Document

10.1109/APMC52720.2021.9661735

Cite this

@inproceedings{f86b5c2d66f64e0faf89c22ea97ba869,

title = "GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications",

abstract = "An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior highorder linearity and power limit prediction critical for wireless applications.",

author = "Parker, {Anthony E.}",

year = "2021",

doi = "10.1109/APMC52720.2021.9661735",

language = "English",

isbn = "9781665437837",

pages = "94--96",

booktitle = "2021 IEEE Asia-Pacific Microwave Conference (APMC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 ; Conference date: 28-11-2021 Through 01-12-2021",

}

Parker, AE 2021, GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications. in 2021 IEEE Asia-Pacific Microwave Conference (APMC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 94-96, 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021, Virtual, Online, Australia, 28/11/21. https://doi.org/10.1109/APMC52720.2021.9661735

TY - GEN

T1 - GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications

AU - Parker, Anthony E.

PY - 2021

Y1 - 2021

N2 - An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior highorder linearity and power limit prediction critical for wireless applications.

AB - An explicit HEMT channel-length modulation model is developed that describes drain conductance in HEMTs. The model is added to a current description based on bulk potential gradient and associated velocity saturation potential. Effective channel-length reduction is described in a compact formulation that correctly fits measured drain conductance and describes formation of the drain current knee. This offers superior highorder linearity and power limit prediction critical for wireless applications.

UR - http://www.scopus.com/inward/record.url?scp=85124412763&partnerID=8YFLogxK

U2 - 10.1109/APMC52720.2021.9661735

DO - 10.1109/APMC52720.2021.9661735

M3 - Conference proceeding contribution

AN - SCOPUS:85124412763

SN - 9781665437837

SP - 94

EP - 96

BT - 2021 IEEE Asia-Pacific Microwave Conference (APMC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021

Y2 - 28 November 2021 through 1 December 2021

ER -

GaN and GaAs HEMT channel conductance model for nonlinear microwave and RF applications

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this