GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications

Anthony E. Parker

doi:10.1109/BCICTS50416.2021.9682497

GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications

Anthony E. Parker^*

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

2 Citations (Scopus)

Abstract

An explicit drain current model accounts for channel charge and electron velocity in GaN and GaAs HEMTs. Saturated current is shown to be dependent on the bulk potential gradient and correct determination of mobility and peak velocity potential. As an advancement over existing approaches, the model produces an improved prediction of linearity and temperature dependence in a compact formulation. It offers superior high-order linearity prediction critical for wireless applications.

Original language	English
Title of host publication	2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	8
ISBN (Electronic)	9781665439909
ISBN (Print)	9781665439916
DOIs	https://doi.org/10.1109/BCICTS50416.2021.9682497
Publication status	Published - 2021
Event	2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021 - Monterey, United States Duration: 5 Dec 2021 → 8 Dec 2021

Conference

Conference	2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021
Country/Territory	United States
City	Monterey
Period	5/12/21 → 8/12/21

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10.1109/BCICTS50416.2021.9682497

Cite this

@inproceedings{77e9e53f62404382880b0613d08cc5f8,

title = "GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications",

abstract = "An explicit drain current model accounts for channel charge and electron velocity in GaN and GaAs HEMTs. Saturated current is shown to be dependent on the bulk potential gradient and correct determination of mobility and peak velocity potential. As an advancement over existing approaches, the model produces an improved prediction of linearity and temperature dependence in a compact formulation. It offers superior high-order linearity prediction critical for wireless applications. ",

author = "Parker, \{Anthony E.\}",

year = "2021",

doi = "10.1109/BCICTS50416.2021.9682497",

language = "English",

isbn = "9781665439916",

booktitle = "2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021 ; Conference date: 05-12-2021 Through 08-12-2021",

}

Parker, AE 2021, GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications. in 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, United States, 5/12/21. https://doi.org/10.1109/BCICTS50416.2021.9682497

GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications. / Parker, Anthony E.
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2021.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications

AU - Parker, Anthony E.

PY - 2021

Y1 - 2021

N2 - An explicit drain current model accounts for channel charge and electron velocity in GaN and GaAs HEMTs. Saturated current is shown to be dependent on the bulk potential gradient and correct determination of mobility and peak velocity potential. As an advancement over existing approaches, the model produces an improved prediction of linearity and temperature dependence in a compact formulation. It offers superior high-order linearity prediction critical for wireless applications.

AB - An explicit drain current model accounts for channel charge and electron velocity in GaN and GaAs HEMTs. Saturated current is shown to be dependent on the bulk potential gradient and correct determination of mobility and peak velocity potential. As an advancement over existing approaches, the model produces an improved prediction of linearity and temperature dependence in a compact formulation. It offers superior high-order linearity prediction critical for wireless applications.

UR - https://www.scopus.com/pages/publications/85124413466

U2 - 10.1109/BCICTS50416.2021.9682497

DO - 10.1109/BCICTS50416.2021.9682497

M3 - Conference proceeding contribution

AN - SCOPUS:85124413466

SN - 9781665439916

BT - 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021

Y2 - 5 December 2021 through 8 December 2021

ER -

GaN and GaAs HEMT channel current model for nonlinear microwave and RF applications

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