GaN FET current change and recovery during and after gamma radiation

Evan S. Shelley; Mohamed N. Ahmed; Nicola V. Lubczyk; Andrew L. Parker; Anthony E. Parker; Simon J. Mahon; Melissa C. Gorman

doi:10.23919/EuMIC61603.2024.10732493

GaN FET current change and recovery during and after gamma radiation

Evan S. Shelley, Mohamed N. Ahmed, Nicola V. Lubczyk, Andrew L. Parker, Anthony E. Parker, Simon J. Mahon, Melissa C. Gorman

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

GaN FET devices are measured, not only before and after, but also during exposure to cobalt-60 gamma radiation. Threshold voltage and drain-gate current variations are observed from CW measurements and the threshold shift compared to control devices. Uniquely, pulsed measurements are also utilised. Results suggest that the effect of the radiation is simple heating.

Original language	English
Title of host publication	Proceedings of the 19th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	10-13
Number of pages	4
ISBN (Electronic)	9782874870781
ISBN (Print)	9798350385120, 9782874870767
DOIs	https://doi.org/10.23919/EuMIC61603.2024.10732493
Publication status	Published - 2024
Event	European Microwave Integrated Circuits Conference (19th : 2024) - Paris, France Duration: 22 Sept 2024 → 27 Sept 2024

Conference

Conference	European Microwave Integrated Circuits Conference (19th : 2024)
Abbreviated title	EuMIC 2024
Country/Territory	France
City	Paris
Period	22/09/24 → 27/09/24

Keywords

FETs
Gallium nitride
gamma radiation
traps

Access to Document

10.23919/EuMIC61603.2024.10732493

Cite this

Shelley, E. S., Ahmed, M. N., Lubczyk, N. V., Parker, A. L., Parker, A. E., Mahon, S. J., & Gorman, M. C. (2024). GaN FET current change and recovery during and after gamma radiation. In Proceedings of the 19th European Microwave Integrated Circuits Conference (pp. 10-13). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.23919/EuMIC61603.2024.10732493

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title = "GaN FET current change and recovery during and after gamma radiation",

abstract = "GaN FET devices are measured, not only before and after, but also during exposure to cobalt-60 gamma radiation. Threshold voltage and drain-gate current variations are observed from CW measurements and the threshold shift compared to control devices. Uniquely, pulsed measurements are also utilised. Results suggest that the effect of the radiation is simple heating.",

keywords = "FETs, Gallium nitride, gamma radiation, traps",

author = "Shelley, \{Evan S.\} and Ahmed, \{Mohamed N.\} and Lubczyk, \{Nicola V.\} and Parker, \{Andrew L.\} and Parker, \{Anthony E.\} and Mahon, \{Simon J.\} and Gorman, \{Melissa C.\}",

year = "2024",

doi = "10.23919/EuMIC61603.2024.10732493",

language = "English",

isbn = "9798350385120",

pages = "10--13",

booktitle = "Proceedings of the 19th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "European Microwave Integrated Circuits Conference (19th : 2024), EuMIC 2024 ; Conference date: 22-09-2024 Through 27-09-2024",

}

Shelley, ES, Ahmed, MN, Lubczyk, NV, Parker, AL, Parker, AE , Mahon, SJ & Gorman, MC 2024, GaN FET current change and recovery during and after gamma radiation. in Proceedings of the 19th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), pp. 10-13, European Microwave Integrated Circuits Conference (19th : 2024), Paris, France, 22/09/24. https://doi.org/10.23919/EuMIC61603.2024.10732493

GaN FET current change and recovery during and after gamma radiation. / Shelley, Evan S.; Ahmed, Mohamed N.; Lubczyk, Nicola V. et al.
Proceedings of the 19th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), 2024. p. 10-13.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - GaN FET current change and recovery during and after gamma radiation

AU - Shelley, Evan S.

AU - Ahmed, Mohamed N.

AU - Lubczyk, Nicola V.

AU - Parker, Andrew L.

AU - Parker, Anthony E.

AU - Mahon, Simon J.

AU - Gorman, Melissa C.

PY - 2024

Y1 - 2024

N2 - GaN FET devices are measured, not only before and after, but also during exposure to cobalt-60 gamma radiation. Threshold voltage and drain-gate current variations are observed from CW measurements and the threshold shift compared to control devices. Uniquely, pulsed measurements are also utilised. Results suggest that the effect of the radiation is simple heating.

AB - GaN FET devices are measured, not only before and after, but also during exposure to cobalt-60 gamma radiation. Threshold voltage and drain-gate current variations are observed from CW measurements and the threshold shift compared to control devices. Uniquely, pulsed measurements are also utilised. Results suggest that the effect of the radiation is simple heating.

KW - FETs

KW - Gallium nitride

KW - gamma radiation

KW - traps

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U2 - 10.23919/EuMIC61603.2024.10732493

DO - 10.23919/EuMIC61603.2024.10732493

M3 - Conference proceeding contribution

SN - 9798350385120

SN - 9782874870767

SP - 10

EP - 13

BT - Proceedings of the 19th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - European Microwave Integrated Circuits Conference (19th : 2024)

Y2 - 22 September 2024 through 27 September 2024

ER -

GaN FET current change and recovery during and after gamma radiation

Abstract

Conference

Keywords

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