Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes

P. Arifin*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n+GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analyzed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n+ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as ω+s$/ with s = 0.65. These observations are consistent with hopping through gap states.

Original languageEnglish
Title of host publication1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages345-348
Number of pages4
ISBN (Print)0780333748, 9780780333741
DOIs
Publication statusPublished - 1996
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 8 Dec 199611 Dec 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period8/12/9611/12/96

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