Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes

P. Arifin; T. L. Tansley; E. M. Goldys

doi:10.1109/COMMAD.1996.610141

Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes

P. Arifin^*, T. L. Tansley, E. M. Goldys

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n⁺GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analyzed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n⁺ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as ω+s$/ with s = 0.65. These observations are consistent with hopping through gap states.

Original language	English
Title of host publication	1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	345-348
Number of pages	4
ISBN (Print)	0780333748, 9780780333741
DOIs	https://doi.org/10.1109/COMMAD.1996.610141
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

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10.1109/COMMAD.1996.610141

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Arifin, P., Tansley, T. L., & Goldys, E. M. (1996). Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes. In 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings (pp. 345-348). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.1996.610141

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title = "Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes",

abstract = "We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n+GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analyzed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n+ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as ω+s$/ with s = 0.65. These observations are consistent with hopping through gap states.",

author = "P. Arifin and Tansley, {T. L.} and Goldys, {E. M.}",

year = "1996",

doi = "10.1109/COMMAD.1996.610141",

language = "English",

isbn = "0780333748",

pages = "345--348",

booktitle = "1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Arifin, P, Tansley, TL & Goldys, EM 1996, Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes. in 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 345-348, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610141

Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes. / Arifin, P.; Tansley, T. L.; Goldys, E. M.
1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 345-348.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes

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AU - Tansley, T. L.

AU - Goldys, E. M.

PY - 1996

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N2 - We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n+GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analyzed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n+ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as ω+s$/ with s = 0.65. These observations are consistent with hopping through gap states.

AB - We have probed transport mechanisms in Al/low temperature (LT) grown GaAs/n+GaAs Schottky diodes through their I-V characteristics as a function of temperature and through their AC conductivity at room temperature. The structures show features of rectification and series resistance. The former is analyzed in terms of thermionic emission-tunneling theory and shows the temperature dependent ideality factor close to three, characteristic of tunneling through the depletion barrier of the n+ substrate. Electrons are injected through this barrier into gap states in the LT GaAs layer. The series resistance versus temperature shows an Arrhenius type behaviour with an activation energy of 32 meV, while the frequency-dependent AC conductivity behaves as ω+s$/ with s = 0.65. These observations are consistent with hopping through gap states.

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BT - 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings

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Arifin P, Tansley TL, Goldys EM. Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes. In 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 1996. p. 345-348 doi: 10.1109/COMMAD.1996.610141

Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n⁺GaAs Schottky diodes

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