Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes

P. Arifin*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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    Engineering & Materials Science