Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n+GaAs Schottky diodes

P. Arifin*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Fingerprint Dive into the research topics of 'Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n<sup>+</sup>GaAs Schottky diodes'. Together they form a unique fingerprint.

Engineering & Materials Science