Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Cormac Corr, Rod Boswell, Robert Carman

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate the addition of hydrogen, which greatly affects the gas phase species and the GaN film characteristics. OES is demonstrated to be a valuable monitoring tool in a RPCVD system for optimization of GaN growth.

LanguageEnglish
Article number045201
Pages1-8
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume44
Issue number4
DOIs
Publication statusPublished - 2 Feb 2011

Fingerprint

Gallium nitride
Optical emission spectroscopy
gallium nitrides
optical emission spectroscopy
Chemical vapor deposition
Gases
vapor deposition
vapor phases
Plasmas
Hydrogen
Nitrogen
nitrogen plasma
Plasma sources
hydrogen plasma
Film growth
gallium nitride
nitrogen
Thin films
optimization
Monitoring

Cite this

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abstract = "A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate the addition of hydrogen, which greatly affects the gas phase species and the GaN film characteristics. OES is demonstrated to be a valuable monitoring tool in a RPCVD system for optimization of GaN growth.",
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Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics. / Corr, Cormac; Boswell, Rod; Carman, Robert.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 4, 045201, 02.02.2011, p. 1-8.

Research output: Contribution to journalArticleResearchpeer-review

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