Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Cormac Corr*, Rod Boswell, Robert Carman

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate the addition of hydrogen, which greatly affects the gas phase species and the GaN film characteristics. OES is demonstrated to be a valuable monitoring tool in a RPCVD system for optimization of GaN growth.

Original languageEnglish
Article number045201
Pages (from-to)1-8
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume44
Issue number4
DOIs
Publication statusPublished - 2 Feb 2011

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