GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)

Ari Handono Ramelan; Pepen Arifin; Ewa Goldys

doi:10.1109/ICONN.2010.6045185

GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)

Ari Handono Ramelan^*, Pepen Arifin, Ewa Goldys

^*Corresponding author for this work

MQ Photonics Research Centre

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Nanostructures have become a topic of increasing interest due to their fundamental properties and possible device applications. One method of fabrication that is receiving much attention lately is the utilization of the coherent Stranski-Krastanov mode which leads to self-assembly of small-scale islands, driven by the lattice mismatch between the quantum dot material and the underlying substrate material [1-5]. W e quantitatively investigate initial stages of growth and evolution of GaSb islands on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). We pay particular attention to the transition from 2D to 3D growth and to the transition between isolated island growth and the coalescence of islands in an effort to improve our understanding of this regime. The extent of oxidation and growth derived oxygen contamination for GaSb quantum dots grown by metalorganic chemical vapour deposition (MOCVD) were also investigated by X-ray photoelectron spectroscopy (XPS) using a system with high energy resolution.

Original language	English
Title of host publication	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
Editors	Andrew Dzurak
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	84-86
Number of pages	3
ISBN (Print)	9781424452620
DOIs	https://doi.org/10.1109/ICONN.2010.6045185
Publication status	Published - 2010
Event	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010 - Sydney, Australia Duration: 22 Feb 2010 → 26 Feb 2010

Other

Other	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010
Country/Territory	Australia
City	Sydney
Period	22/02/10 → 26/02/10

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10.1109/ICONN.2010.6045185

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Ramelan, A. H., Arifin, P., & Goldys, E. (2010). GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS). In A. Dzurak (Ed.), ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology (pp. 84-86). [6045185] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICONN.2010.6045185

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title = "GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)",

abstract = "Nanostructures have become a topic of increasing interest due to their fundamental properties and possible device applications. One method of fabrication that is receiving much attention lately is the utilization of the coherent Stranski-Krastanov mode which leads to self-assembly of small-scale islands, driven by the lattice mismatch between the quantum dot material and the underlying substrate material [1-5]. W e quantitatively investigate initial stages of growth and evolution of GaSb islands on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). We pay particular attention to the transition from 2D to 3D growth and to the transition between isolated island growth and the coalescence of islands in an effort to improve our understanding of this regime. The extent of oxidation and growth derived oxygen contamination for GaSb quantum dots grown by metalorganic chemical vapour deposition (MOCVD) were also investigated by X-ray photoelectron spectroscopy (XPS) using a system with high energy resolution.",

author = "Ramelan, {Ari Handono} and Pepen Arifin and Ewa Goldys",

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note = "2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010 ; Conference date: 22-02-2010 Through 26-02-2010",

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Ramelan, AH, Arifin, P & Goldys, E 2010, GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS). in A Dzurak (ed.), ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology., 6045185, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 84-86, 2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN - 2010, Sydney, New South Wales, Australia, 22/02/10. https://doi.org/10.1109/ICONN.2010.6045185

GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS). / Ramelan, Ari Handono; Arifin, Pepen; Goldys, Ewa.
ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. ed. / Andrew Dzurak. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 84-86 6045185.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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ER -

GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)

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