GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications

A. H. Ramelan*, I. Yahya, Prasodjo, E. M. Goldys

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540° C, 580° C and 600° C and a V/III ratio of 1 have been investigated. The AlxGa1-xSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

Original languageEnglish
Pages (from-to)323-329
Number of pages7
JournalJournal of Nonlinear Optical Physics and Materials
Volume15
Issue number3
Publication statusPublished - Sep 2006

Fingerprint Dive into the research topics of 'GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications'. Together they form a unique fingerprint.

  • Cite this