GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications

A. H. Ramelan; I. Yahya; Prasodjo; E. M. Goldys

GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications

A. H. Ramelan^*, I. Yahya, Prasodjo, E. M. Goldys

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Al_xGa_1-xSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540° C, 580° C and 600° C and a V/III ratio of 1 have been investigated. The Al_xGa_1-xSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

Original language	English
Pages (from-to)	323-329
Number of pages	7
Journal	Journal of Nonlinear Optical Physics and Materials
Volume	15
Issue number	3
Publication status	Published - Sept 2006

Cite this

@article{c7e6459074c44a679105e52d44071d9a,

title = "GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications",

abstract = "AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540° C, 580° C and 600° C and a V/III ratio of 1 have been investigated. The AlxGa1-xSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5\% to 25\% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.",

author = "Ramelan, \{A. H.\} and I. Yahya and Prasodjo and Goldys, \{E. M.\}",

year = "2006",

month = sep,

language = "English",

volume = "15",

pages = "323--329",

journal = "Journal of Nonlinear Optical Physics and Materials",

issn = "0218-8635",

publisher = "World Scientific Publishing",

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TY - JOUR

T1 - GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications

AU - Ramelan, A. H.

AU - Yahya, I.

AU - Prasodjo,

AU - Goldys, E. M.

PY - 2006/9

Y1 - 2006/9

N2 - AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540° C, 580° C and 600° C and a V/III ratio of 1 have been investigated. The AlxGa1-xSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

AB - AlxGa1-xSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540° C, 580° C and 600° C and a V/III ratio of 1 have been investigated. The AlxGa1-xSb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

UR - https://www.scopus.com/pages/publications/33750580741

M3 - Article

AN - SCOPUS:33750580741

SN - 0218-8635

VL - 15

SP - 323

EP - 329

JO - Journal of Nonlinear Optical Physics and Materials

JF - Journal of Nonlinear Optical Physics and Materials

IS - 3

ER -

GaSb/AlGaSb compound semiconductors grown by MOCVD for optoelectronic applications

Abstract

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