Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections

Changhong Chen*, Renfan Wang, Lang Shang, Chongfeng Guo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


In a metal-oxide-semiconductor VO2 active layer under uniaxial stress, gate-field-induced phase transitions are revealed by strongly field-dependent Raman scattering and infrared reflections. A metal-insulator transition (MIT) is demonstrated by a strongly correlated monoclinic metal phase separation that percolates, thereby making the reflections switchable. In addition, the MIT occurs at a gate voltage around 3.36 V, much lower than the threshold of a structural phase transition (SPT). Hence, the MIT is easily controlled by the gate field to avoid the SPT-caused fatigue and breakdown in high-speed operation.

Original languageEnglish
Article number171101
Pages (from-to)171101-1-171101-3
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2008

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