Abstract
In a metal-oxide-semiconductor VO2 active layer under uniaxial stress, gate-field-induced phase transitions are revealed by strongly field-dependent Raman scattering and infrared reflections. A metal-insulator transition (MIT) is demonstrated by a strongly correlated monoclinic metal phase separation that percolates, thereby making the reflections switchable. In addition, the MIT occurs at a gate voltage around 3.36 V, much lower than the threshold of a structural phase transition (SPT). Hence, the MIT is easily controlled by the gate field to avoid the SPT-caused fatigue and breakdown in high-speed operation.
| Original language | English |
|---|---|
| Article number | 171101 |
| Pages (from-to) | 171101-1-171101-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2008 |
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Chen, C., Wang, R., Shang, L., & Guo, C. (2008). Gate-field-induced phase transitions in VO2: monoclinic metal phase separation and switchable infrared reflections. Applied Physics Letters, 93(17), 171101-1-171101-3. [171101]. https://doi.org/10.1063/1.3009569