Abstract
In a metal-oxide-semiconductor VO2 active layer under uniaxial stress, gate-field-induced phase transitions are revealed by strongly field-dependent Raman scattering and infrared reflections. A metal-insulator transition (MIT) is demonstrated by a strongly correlated monoclinic metal phase separation that percolates, thereby making the reflections switchable. In addition, the MIT occurs at a gate voltage around 3.36 V, much lower than the threshold of a structural phase transition (SPT). Hence, the MIT is easily controlled by the gate field to avoid the SPT-caused fatigue and breakdown in high-speed operation.
Original language | English |
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Article number | 171101 |
Pages (from-to) | 171101-1-171101-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2008 |