Generation of single color centers by focused nitrogen implantation

J. Meijer; B. Burchard; M. Domhan; C. Wittmann; T. Gaebel; I. Popa; F. Jelezko; J. Wrachtrup

doi:10.1063/1.2103389

Generation of single color centers by focused nitrogen implantation

J. Meijer^*, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

203 Citations (Scopus)

Abstract

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.

Original language	English
Article number	261909
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2103389
Publication status	Published - 2005

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10.1063/1.2103389

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title = "Generation of single color centers by focused nitrogen implantation",

abstract = "Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.",

author = "J. Meijer and B. Burchard and M. Domhan and C. Wittmann and T. Gaebel and I. Popa and F. Jelezko and J. Wrachtrup",

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AU - Meijer, J.

AU - Burchard, B.

AU - Domhan, M.

AU - Wittmann, C.

AU - Gaebel, T.

AU - Popa, I.

AU - Jelezko, F.

AU - Wrachtrup, J.

PY - 2005

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N2 - Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.

AB - Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.

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DO - 10.1063/1.2103389

M3 - Article

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Generation of single color centers by focused nitrogen implantation

Abstract

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