Generation of single color centers by focused nitrogen implantation

J. Meijer*, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

181 Citations (Scopus)

Abstract

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.

Original languageEnglish
Article number261909
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number26
DOIs
Publication statusPublished - 2005

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