Generation of single color centers by focused nitrogen implantation

J. Meijer*, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    214 Citations (Scopus)

    Abstract

    Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center.

    Original languageEnglish
    Article number261909
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume87
    Issue number26
    DOIs
    Publication statusPublished - 2005

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