Getting to the Heart of the Matter: Considerations for Large-Signal Modeling of Microwave Field-Effect Transistors

Anthony Parker*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The field-effect transistor (FET) has just three terminals. One is a gate that controls current flowing between the source and drain terminals. It is simple enough, and so widely accepted as a workhorse in microwave applications, that it must be fairly well understood?or is it? Hidden between those terminals is a treasure trove of complicated interactions that have taken years to sort out. Just when we think we know all we need to know, someone asks for double the power, to move up to the next band, or even to do it all again in a new semiconductor material, and so the story continues.

Original languageEnglish
Article number7054701
Pages (from-to)76-86
Number of pages11
JournalIEEE Microwave Magazine
Volume16
Issue number3
DOIs
Publication statusPublished - 1 Apr 2015

Keywords

  • Capacitance
  • Charge carrier processes
  • Field effect transistors
  • Heating
  • Logic gates
  • Ports (Computers)
  • Vectors

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