Glass substrates for GaN using ZnO buffer layers

K. S. A. Butcher, Afifuddin, Patrick P. -T. Chen, M. Godlewski, A. Szczerbakow, E. M. Goldys, T. L. Tansley, J. A. Freitas

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Abstract

Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layers. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for n-type GaN deposited on the ZnO buffered glass substrates, with the results equaling the highest values obtained by others using MBE and high purity silica substrates.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard Broekman, Brian Usher, John Riley
Place of PublicationBundoora, Victoria, Australia,
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages535-538
Number of pages4
Volume2000-January
ISBN (Print)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

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