Glass substrates for GaN using ZnO buffer layers

K. S. A. Butcher; Afifuddin; Patrick P. -T. Chen; M. Godlewski; A. Szczerbakow; E. M. Goldys; T. L. Tansley; J. A. Freitas

doi:10.1109/COMMAD.2000.1023005

Glass substrates for GaN using ZnO buffer layers

K. S. A. Butcher, Afifuddin, Patrick P. -T. Chen, M. Godlewski, A. Szczerbakow, E. M. Goldys, T. L. Tansley, J. A. Freitas

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Abstract

Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layers. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for n-type GaN deposited on the ZnO buffered glass substrates, with the results equaling the highest values obtained by others using MBE and high purity silica substrates.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard Broekman, Brian Usher, John Riley
Place of Publication	Bundoora, Victoria, Australia,
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	535-538
Number of pages	4
Volume	2000-January
ISBN (Print)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1023005
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Bibliographical note

Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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10.1109/COMMAD.2000.1023005

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Butcher, K. S. A., Afifuddin, Chen, P. P. .-T., Godlewski, M., Szczerbakow, A., Goldys, E. M., Tansley, T. L., & Freitas, J. A. (2000). Glass substrates for GaN using ZnO buffer layers. In L. Broekman, B. Usher, & J. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 535-538). Article 1023005 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1023005

Butcher, K. S. A. ; Afifuddin ; Chen, Patrick P. -T. et al. / Glass substrates for GaN using ZnO buffer layers. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard Broekman ; Brian Usher ; John Riley. Vol. 2000-January Bundoora, Victoria, Australia, : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 535-538

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abstract = "Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layers. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for n-type GaN deposited on the ZnO buffered glass substrates, with the results equaling the highest values obtained by others using MBE and high purity silica substrates.",

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Butcher, KSA, Afifuddin, Chen, PP-T, Godlewski, M, Szczerbakow, A, Goldys, EM, Tansley, TL & Freitas, JA 2000, Glass substrates for GaN using ZnO buffer layers. in L Broekman, B Usher & J Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1023005, Institute of Electrical and Electronics Engineers (IEEE), Bundoora, Victoria, Australia, pp. 535-538, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1023005

Glass substrates for GaN using ZnO buffer layers. / Butcher, K. S. A.; Afifuddin; Chen, Patrick P. -T. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard Broekman; Brian Usher; John Riley. Vol. 2000-January Bundoora, Victoria, Australia,: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 535-538 1023005.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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N1 - Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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N2 - Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layers. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for n-type GaN deposited on the ZnO buffered glass substrates, with the results equaling the highest values obtained by others using MBE and high purity silica substrates.

AB - Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layers. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for n-type GaN deposited on the ZnO buffered glass substrates, with the results equaling the highest values obtained by others using MBE and high purity silica substrates.

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Butcher KSA, Afifuddin, Chen PPT, Godlewski M, Szczerbakow A, Goldys EM et al. Glass substrates for GaN using ZnO buffer layers. In Broekman L, Usher B, Riley J, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Bundoora, Victoria, Australia,: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 535-538. 1023005 doi: 10.1109/COMMAD.2000.1023005

Glass substrates for GaN using ZnO buffer layers

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