Abstract
Growth of microcrystalline GaN films by microwave plasma assisted laserinduced chemical vapour deposition has been studied in the temperature range of 525 °C - 650 °C for growth on sapphire and silicon. The influence of substrate temperature is discussed and growth mechanisms are explained. Properties of the GaN films are measured by X-ray diffraction and optical transmission spectroscopy.
Original language | English |
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Title of host publication | COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices |
Editors | Leonard Broekman, Brian Usher, John Riley |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 129-132 |
Number of pages | 4 |
Volume | 2000-January |
ISBN (Electronic) | 0780366980 |
DOIs | |
Publication status | Published - 2000 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000 |
Other
Other | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 |
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Country | Australia |
City | Bundoora |
Period | 6/12/00 → 8/12/00 |