Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

A. Afifuddin, K. S A Butcher, Patrick P T Chen, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

Growth of microcrystalline GaN films by microwave plasma assisted laserinduced chemical vapour deposition has been studied in the temperature range of 525 °C - 650 °C for growth on sapphire and silicon. The influence of substrate temperature is discussed and growth mechanisms are explained. Properties of the GaN films are measured by X-ray diffraction and optical transmission spectroscopy.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard Broekman, Brian Usher, John Riley
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages129-132
Number of pages4
Volume2000-January
ISBN (Electronic)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

Bibliographical note

Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Fingerprint Dive into the research topics of 'Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition'. Together they form a unique fingerprint.

Cite this