Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

A. Afifuddin; K. S A Butcher; Patrick P T Chen; E. M. Goldys; T. L. Tansley

doi:10.1109/COMMAD.2000.1022908

Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

A. Afifuddin, K. S A Butcher, Patrick P T Chen, E. M. Goldys, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

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Abstract

Growth of microcrystalline GaN films by microwave plasma assisted laserinduced chemical vapour deposition has been studied in the temperature range of 525 °C - 650 °C for growth on sapphire and silicon. The influence of substrate temperature is discussed and growth mechanisms are explained. Properties of the GaN films are measured by X-ray diffraction and optical transmission spectroscopy.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard Broekman, Brian Usher, John Riley
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	129-132
Number of pages	4
Volume	2000-January
ISBN (Electronic)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022908
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Bibliographical note

Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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10.1109/COMMAD.2000.1022908

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Afifuddin, A., Butcher, K. S. A., Chen, P. P. T., Goldys, E. M., & Tansley, T. L. (2000). Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition. In L. Broekman, B. Usher, & J. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 129-132). Article 1022908 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022908

Afifuddin, A. ; Butcher, K. S A ; Chen, Patrick P T et al. / Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard Broekman ; Brian Usher ; John Riley. Vol. 2000-January Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 129-132

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author = "A. Afifuddin and Butcher, {K. S A} and Chen, {Patrick P T} and Goldys, {E. M.} and Tansley, {T. L.}",

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Afifuddin, A, Butcher, KSA, Chen, PPT, Goldys, EM & Tansley, TL 2000, Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition. in L Broekman, B Usher & J Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022908, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 129-132, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022908

Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition. / Afifuddin, A.; Butcher, K. S A; Chen, Patrick P T et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard Broekman; Brian Usher; John Riley. Vol. 2000-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 129-132 1022908.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Afifuddin A, Butcher KSA, Chen PPT, Goldys EM, Tansley TL. Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition. In Broekman L, Usher B, Riley J, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 129-132. 1022908 doi: 10.1109/COMMAD.2000.1022908

Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

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