Growth and characterization of beryllium-based II-VI compounds

M. W. Cho; J. H. Chang; D. M. Bagnall; K. W. Koh; S. Saeki; K. T. Park; Z. Zhu; K. Hiraga; T. Yao

doi:10.1063/1.369479

Growth and characterization of beryllium-based II-VI compounds

M. W. Cho^*, J. H. Chang, D. M. Bagnall, K. W. Koh, S. Saeki, K. T. Park, Z. Zhu, K. Hiraga, T. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on the growth and characterization of beryllium-chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn_1-xBe_xSe varies as E_g=0.0107x+2.790(eV) for small Be composition (x<0.25) at 77 K. Lattice-matched ZnBeSe (E_g=2.82eV) and ZnMgBeSe (E_g=2.975eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain.

Original language	English
Pages (from-to)	512-517
Number of pages	6
Journal	Journal of Applied Physics
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.369479
Publication status	Published - 1999
Externally published	Yes

Keywords

X-ray diffraction
band gap
epitaxy
zinc
temperature measurement

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10.1063/1.369479

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title = "Growth and characterization of beryllium-based II-VI compounds",

abstract = "We report on the growth and characterization of beryllium-chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn1-xBexSe varies as Eg=0.0107x+2.790(eV) for small Be composition (x<0.25) at 77 K. Lattice-matched ZnBeSe (Eg=2.82eV) and ZnMgBeSe (Eg=2.975eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain.",

keywords = "X-ray diffraction, band gap, epitaxy, zinc, temperature measurement",

author = "Cho, {M. W.} and Chang, {J. H.} and Bagnall, {D. M.} and Koh, {K. W.} and S. Saeki and Park, {K. T.} and Z. Zhu and K. Hiraga and T. Yao",

year = "1999",

doi = "10.1063/1.369479",

language = "English",

volume = "85",

pages = "512--517",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Growth and characterization of beryllium-based II-VI compounds

AU - Cho, M. W.

AU - Chang, J. H.

AU - Bagnall, D. M.

AU - Koh, K. W.

AU - Saeki, S.

AU - Park, K. T.

AU - Zhu, Z.

AU - Hiraga, K.

AU - Yao, T.

PY - 1999

Y1 - 1999

N2 - We report on the growth and characterization of beryllium-chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn1-xBexSe varies as Eg=0.0107x+2.790(eV) for small Be composition (x<0.25) at 77 K. Lattice-matched ZnBeSe (Eg=2.82eV) and ZnMgBeSe (Eg=2.975eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain.

AB - We report on the growth and characterization of beryllium-chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn1-xBexSe varies as Eg=0.0107x+2.790(eV) for small Be composition (x<0.25) at 77 K. Lattice-matched ZnBeSe (Eg=2.82eV) and ZnMgBeSe (Eg=2.975eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain.

KW - X-ray diffraction

KW - band gap

KW - epitaxy

KW - zinc

KW - temperature measurement

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SP - 512

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Growth and characterization of beryllium-based II-VI compounds

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Keywords

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