A study of structural, electrical and optical properties of GaSb and Al xGa 1-xSb (0.05≤x≤0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540 °C and V/III = 0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All Al xGa 1-xSb in the investigated composition range 0.05≤x≤0.25 were grown at 580 °C and 600 °C and V/III ratio = 3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer.
|Number of pages||4|
|Journal||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|Publication status||Published - 1999|