Growth and properties of GaSb and AlxGa 1-xSb layers by MOCVD

A. H. Ramelan*, K. Drozdowicz-Tomsia, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A study of structural, electrical and optical properties of GaSb and Al xGa 1-xSb (0.05≤x≤0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540 °C and V/III = 0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All Al xGa 1-xSb in the investigated composition range 0.05≤x≤0.25 were grown at 580 °C and 600 °C and V/III ratio = 3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer.

Original languageEnglish
Pages (from-to)464-467
Number of pages4
JournalConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOIs
Publication statusPublished - 1999

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