Growth by atomic layer epitaxy and characterization of thin films of ZnO

K. Kopalko*, A. Wójcik, M. Godlewski, E. Łusakowska, W. Paszkowicz, J. Z. Domagała, M. M. Godlewski, A. Szezerbakow, K. Świa̧tek, K. Dybko

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    22 Citations (Scopus)

    Abstract

    Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.

    Original languageEnglish
    Pages (from-to)1125-1130
    Number of pages6
    JournalPhysica Status Solidi C: Conferences
    Volume2
    Issue number3
    DOIs
    Publication statusPublished - 2005

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