Growth by atomic layer epitaxy and characterization of thin films of ZnO

K. Kopalko*, A. Wójcik, M. Godlewski, E. Łusakowska, W. Paszkowicz, J. Z. Domagała, M. M. Godlewski, A. Szezerbakow, K. Świa̧tek, K. Dybko

*Corresponding author for this work

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Abstract

Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.

Original languageEnglish
Pages (from-to)1125-1130
Number of pages6
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number3
DOIs
Publication statusPublished - 2005

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Kopalko, K., Wójcik, A., Godlewski, M., Łusakowska, E., Paszkowicz, W., Domagała, J. Z., ... Dybko, K. (2005). Growth by atomic layer epitaxy and characterization of thin films of ZnO. Physica Status Solidi C: Conferences, 2(3), 1125-1130. https://doi.org/10.1002/pssc.200460660