Growth by atomic layer epitaxy and characterization of thin films of ZnO

K. Kopalko; A. Wójcik; M. Godlewski; E. Łusakowska; W. Paszkowicz; J. Z. Domagała; M. M. Godlewski; A. Szezerbakow; K. Świa̧tek; K. Dybko

doi:10.1002/pssc.200460660

Growth by atomic layer epitaxy and characterization of thin films of ZnO

K. Kopalko^*, A. Wójcik, M. Godlewski, E. Łusakowska, W. Paszkowicz, J. Z. Domagała, M. M. Godlewski, A. Szezerbakow, K. Świa̧tek, K. Dybko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al²O₃ substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.

Original language	English
Pages (from-to)	1125-1130
Number of pages	6
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200460660
Publication status	Published - 2005

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abstract = "Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.",

author = "K. Kopalko and A. W{\'o}jcik and M. Godlewski and E. {\L}usakowska and W. Paszkowicz and Domaga{\l}a, {J. Z.} and Godlewski, {M. M.} and A. Szezerbakow and K. {\'S}wi{\c a}tek and K. Dybko",

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doi = "10.1002/pssc.200460660",

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T1 - Growth by atomic layer epitaxy and characterization of thin films of ZnO

AU - Kopalko, K.

AU - Wójcik, A.

AU - Godlewski, M.

AU - Łusakowska, E.

AU - Paszkowicz, W.

AU - Domagała, J. Z.

AU - Godlewski, M. M.

AU - Szezerbakow, A.

AU - Świa̧tek, K.

AU - Dybko, K.

PY - 2005

Y1 - 2005

N2 - Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.

AB - Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors.

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U2 - 10.1002/pssc.200460660

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M3 - Article

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

ER -

Growth by atomic layer epitaxy and characterization of thin films of ZnO

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