Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Agus Subekti*, E. M. Goldys, Trevor L. Tansley

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm 2V -1 s -1 and 0.5-3.0×10 17 cm -3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.

Original languageEnglish
Title of host publicationConference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages426-429
Number of pages4
DOIs
Publication statusPublished - 1996
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 8 Dec 199611 Dec 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period8/12/9611/12/96

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