Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Agus Subekti; E. M. Goldys; Trevor L. Tansley

doi:10.1109/COMMAD.1996.610157

Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Agus Subekti^*, E. M. Goldys, Trevor L. Tansley

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm ²V ^-1 s ^-1 and 0.5-3.0×10 ¹⁷ cm ^-3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.

Original language	English
Title of host publication	1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings
Editors	C Jagadish
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	426-429
Number of pages	4
ISBN (Print)	0780333748
DOIs	https://doi.org/10.1109/COMMAD.1996.610157
Publication status	Published - 1996
Event	1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9) - CANBERRA, Australia Duration: 8 Dec 1996 → 11 Dec 1996

Conference

Conference	1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)
Country/Territory	Australia
City	CANBERRA
Period	8/12/96 → 11/12/96

Access to Document

10.1109/COMMAD.1996.610157

Cite this

@inproceedings{479c4de4606f47c49cf19e94bd07eed3,

title = "Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition",

abstract = "Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm 2V -1 s -1 and 0.5-3.0×10 17 cm -3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.",

author = "Agus Subekti and Goldys, {E. M.} and Tansley, {Trevor L.}",

year = "1996",

doi = "10.1109/COMMAD.1996.610157",

language = "English",

isbn = "0780333748",

pages = "426--429",

editor = "C Jagadish",

booktitle = "1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9) ; Conference date: 08-12-1996 Through 11-12-1996",

}

Subekti, A, Goldys, EM & Tansley, TL 1996, Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition. in C Jagadish (ed.), 1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 426-429, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), CANBERRA, Australia, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610157

Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition. / Subekti, Agus; Goldys, E. M.; Tansley, Trevor L.
1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings. ed. / C Jagadish. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 426-429.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

AU - Subekti, Agus

AU - Goldys, E. M.

AU - Tansley, Trevor L.

PY - 1996

Y1 - 1996

N2 - Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm 2V -1 s -1 and 0.5-3.0×10 17 cm -3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.

AB - Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm 2V -1 s -1 and 0.5-3.0×10 17 cm -3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.

UR - http://www.scopus.com/inward/record.url?scp=0030353924&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.1996.610157

DO - 10.1109/COMMAD.1996.610157

M3 - Conference proceeding contribution

AN - SCOPUS:0030353924

SN - 0780333748

SP - 426

EP - 429

BT - 1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings

A2 - Jagadish, C

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)

Y2 - 8 December 1996 through 11 December 1996

ER -

Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this