Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Agus Subekti*, E. M. Goldys, Trevor L. Tansley

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    3 Citations (Scopus)

    Abstract

    Growth of unintentionally doped GaSb by atmospheric pressure MOCVD using Trimethylgallium (TMGa) and Trimethylantimonide (TMSb) on various substrate is investigated. Optimum growth temperature and the V/III ratio window is given with respect to hole density, mobility and optical properties. The optimum growth rate was found to be 2.2 μm/h with good surface morphology for samples grown at 500-540 °C and V/III ratio approximately equal to unity. The as grown samples are p-type, having room-temperature mobility and hole density, at the optimum growth condition as above, of 500 cm 2V -1 s -1 and 0.5-3.0×10 17 cm -3, respectively. The fundamental absorption band edge of grown layers in transmission spectra shows clear excitonic features at low temperatures. Very short growth time leads to quantum dot formation, with the best quantum dots grown on Ge.

    Original languageEnglish
    Title of host publication1996 Conference on Optoelectronic and Microelectronic Materials and Devices, proceedings
    EditorsC Jagadish
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages426-429
    Number of pages4
    ISBN (Print)0780333748
    DOIs
    Publication statusPublished - 1996
    Event1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9) - CANBERRA, Australia
    Duration: 8 Dec 199611 Dec 1996

    Conference

    Conference1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)
    CountryAustralia
    CityCANBERRA
    Period8/12/9611/12/96

    Fingerprint

    Dive into the research topics of 'Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

    Cite this