Growth of GaN films by combined laser and microwave plasma enhanced chemical vapour deposition

Bing Zhou, Xin Li*, T. L. Tansley, K. S. A. Butcher, M. R. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

GaN films have been grown on quartz and (011̄2) sapphire substrates using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition (MOCVD) at a substrate temperature of 500°C. Film compositions were analysed by X-ray photoelectron spectroscopy (XPS) and less than 5% residual impurity, principally carbon and oxygen was found. Films grown on quartz were polycrystalline wurtzite with a preferential (0002) orientation, while (0002) and (21̄1̄0) orientations were both found on (011̄2) sapphire. Electron carrier concentration was found to be controllable between 1017 and 1014 cm-3 via control of ammonia plasma injection rate, whilst electron mobility also increased proportionally with the flow rate of the plasma. A room-temperature mobility of 95 cm2 V-1 s-1 was obtained for films on (011̄2) sapphire, saturating at a plasma flow rate of 100 ml/min. The results are interpreted as showing a reduction of nitrogen vacancies by an increase in the reacting species liberated in the plasma.

Original languageEnglish
Pages (from-to)249-253
Number of pages5
JournalJournal of Crystal Growth
Volume151
Issue number3-4
DOIs
Publication statusPublished - 1 Jun 1995

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