Growth of high purity liquid phase epitaxial GaAs in a silica growth system

K. S. A. Butcher*, L. Mo, D. Alexiev, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm-3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (CV) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.

Original languageEnglish
Pages (from-to)361-367
Number of pages7
JournalJournal of Crystal Growth
Volume156
Issue number4
DOIs
Publication statusPublished - 1 Dec 1995

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