Growth of high purity liquid phase epitaxial GaAs in a silica growth system

K. S. A. Butcher; L. Mo; D. Alexiev; T. L. Tansley

doi:10.1016/0022-0248(95)00297-9

Growth of high purity liquid phase epitaxial GaAs in a silica growth system

K. S. A. Butcher^*, L. Mo, D. Alexiev, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (N_A,D ≈ 10¹³ cm^-3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (CV) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.

Original language	English
Pages (from-to)	361-367
Number of pages	7
Journal	Journal of Crystal Growth
Volume	156
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(95)00297-9
Publication status	Published - 1 Dec 1995

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title = "Growth of high purity liquid phase epitaxial GaAs in a silica growth system",

abstract = "Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm-3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (CV) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.",

author = "Butcher, {K. S. A.} and L. Mo and D. Alexiev and Tansley, {T. L.}",

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AU - Butcher, K. S. A.

AU - Mo, L.

AU - Alexiev, D.

AU - Tansley, T. L.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm-3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (CV) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.

AB - Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm-3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (CV) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.

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VL - 156

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JO - Journal of Crystal Growth

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IS - 4

ER -

Growth of high purity liquid phase epitaxial GaAs in a silica growth system

Abstract

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