Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Penka T. Terziyska*, Kenneth Scott A Butcher, Peter Rafailov, Dimiter Alexandrov

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A1(TO), E2(high) and A1(LO) phonon modes of the hexagonal InN.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalApplied Surface Science
Volume353
DOIs
Publication statusPublished - 30 Oct 2015
Externally publishedYes

Keywords

  • InN
  • Migration enhanced CVD
  • Nanorod
  • Selective area growth
  • Self-catalysis

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