Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys*, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40nm, the height of 4nm and the density in the order of 1010cm-2 can beachieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.

Original languageEnglish
Pages (from-to)621-626
Number of pages6
JournalJournal of Crystal Growth
Volume236
Issue number4
DOIs
Publication statusPublished - Mar 2002

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