Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

null Motlan; E. M. Goldys; T. L. Tansley

doi:10.1016/S0022-0248(02)00845-X

Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Motlan, E. M. Goldys^*, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40nm, the height of 4nm and the density in the order of 10¹⁰cm^-2 can beachieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.

Original language	English
Pages (from-to)	621-626
Number of pages	6
Journal	Journal of Crystal Growth
Volume	236
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(02)00845-X
Publication status	Published - Mar 2002

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title = "Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD",

abstract = "Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40nm, the height of 4nm and the density in the order of 1010cm-2 can beachieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.",

author = "Motlan and Goldys, {E. M.} and Tansley, {T. L.}",

year = "2002",

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AU - Motlan, null

AU - Goldys, E. M.

AU - Tansley, T. L.

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Y1 - 2002/3

N2 - Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40nm, the height of 4nm and the density in the order of 1010cm-2 can beachieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.

AB - Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of the dots can be controlled by growth temperature, growth time and the dilution of the growth precursors. The dot width of 40nm, the height of 4nm and the density in the order of 1010cm-2 can beachieved. These results are comparable with GaSb/GaAs QDs grown by molecular beam epitaxy.

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Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Abstract

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