Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Krystyna Drozdowicz-Tomsia; Ewa M. Goldys; Motlan Motlan; Hadi Zareie; Matthew R. Phillips

doi:10.1063/1.1920418

Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Krystyna Drozdowicz-Tomsia^*, Ewa M. Goldys, Motlan Motlan, Hadi Zareie, Matthew R. Phillips

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.

Original language	English
Article number	173113
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	17
DOIs	https://doi.org/10.1063/1.1920418
Publication status	Published - 25 Apr 2005

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10.1063/1.1920418

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abstract = "Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.",

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AU - Drozdowicz-Tomsia, Krystyna

AU - Goldys, Ewa M.

AU - Motlan, Motlan

AU - Zareie, Hadi

AU - Phillips, Matthew R.

PY - 2005/4/25

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N2 - Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.

AB - Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.

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Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

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