Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Krystyna Drozdowicz-Tomsia*, Ewa M. Goldys, Motlan Motlan, Hadi Zareie, Matthew R. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.

Original languageEnglish
Article number173113
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number17
DOIs
Publication statusPublished - 25 Apr 2005

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