Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 25 Apr 2005|