HEMT model based on the Parker-Skellern MESFET model

D. R. Webster*, A. E. Parker, D. G. Haigh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.

Original languageEnglish
Pages (from-to)493-494
Number of pages2
JournalElectronics Letters
Volume32
Issue number5
Publication statusPublished - 29 Feb 1996

Keywords

  • CAD
  • High electron mobility transistors
  • Semiconductor device models

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