HEMT model based on the Parker-Skellern MESFET model

D. R. Webster; A. E. Parker; D. G. Haigh

HEMT model based on the Parker-Skellern MESFET model

D. R. Webster^*, A. E. Parker, D. G. Haigh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.

Original language	English
Pages (from-to)	493-494
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	5
Publication status	Published - 29 Feb 1996

Keywords

CAD
High electron mobility transistors
Semiconductor device models

Cite this

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title = "HEMT model based on the Parker-Skellern MESFET model",

abstract = "A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.",

keywords = "CAD, High electron mobility transistors, Semiconductor device models",

author = "Webster, {D. R.} and Parker, {A. E.} and Haigh, {D. G.}",

year = "1996",

month = feb,

day = "29",

language = "English",

volume = "32",

pages = "493--494",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "5",

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TY - JOUR

T1 - HEMT model based on the Parker-Skellern MESFET model

AU - Webster, D. R.

AU - Parker, A. E.

AU - Haigh, D. G.

PY - 1996/2/29

Y1 - 1996/2/29

N2 - A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.

AB - A HEMT model based on the Parker-Skellern MESFET model is presented. The model correctly exhibits a fall in transconductance at high gate bias together with frequency dispersion in both transconductance and output conductance. This is verified using a comparison with measured results.

KW - CAD

KW - High electron mobility transistors

KW - Semiconductor device models

UR - http://www.scopus.com/inward/record.url?scp=3242840384&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242840384

SN - 0013-5194

VL - 32

SP - 493

EP - 494

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

HEMT model based on the Parker-Skellern MESFET model

Abstract

Keywords

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