Abstract
In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4 × 107 pairs · s -1 nm-1 W-1 facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g2* (0) of 0.06 proving nonclassical operation in the single photon regime.
| Original language | English |
|---|---|
| Pages (from-to) | 649-651 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 38 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 Mar 2013 |
| Externally published | Yes |