Hetero-epitaxial Γ-Al2O3 on Si (100) substrate by sputtering

Y. X. Liao*, S. Shrestha, S. J. Huang, G. Conibeer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, the hetero-epitaxy of γ-Al2O3 films on Si (100) substrates by RF magnetron sputtering has been systematically studied. Crystal quality improves with growth temperature from 400 °C to 700 °C. The films sputtered with 4.5% extra O2 or on a Si substrate with a thin oxide show better crystal qualities. Low sputtering power such as 60 W is essential to maintain good interfaces. Direct evidence of sputtering epitaxy of γ-Al2O3 on Si (100) is demonstrated for the first time. These results are very useful for low-cost growth of epitaxial γ-Al2O3 which has been used as buffer layers for epitaxial III-V materials on Si and barrier layers for electronic devices.

Original languageEnglish
Pages (from-to)20-22
Number of pages3
JournalMaterials Letters
Publication statusPublished - 15 Feb 2015
Externally publishedYes


  • Crystal growth
  • Sputtering
  • Epitaxial growth
  • Thin films


Dive into the research topics of 'Hetero-epitaxial Γ-Al2O3 on Si (100) substrate by sputtering'. Together they form a unique fingerprint.

Cite this