Heteroepitaxial growth of Cu2ZnSnS4 thin film on sapphire substrate by radio frequency magnetron sputtering

Ning Song; Yu Wang; Yicong Hu; Yidan Huang; Wei Li; Shujuan Huang; Xiaojing Hao

doi:10.1063/1.4867093

Heteroepitaxial growth of Cu₂ZnSnS₄ thin film on sapphire substrate by radio frequency magnetron sputtering

Ning Song^*, Yu Wang, Yicong Hu, Yidan Huang, Wei Li, Shujuan Huang, Xiaojing Hao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) â€- sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201̄] â€- sapphire [21̄1̄0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

Original language	English
Article number	092103
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	104
Issue number	9
DOIs	https://doi.org/10.1063/1.4867093
Publication status	Published - 3 Mar 2014
Externally published	Yes

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title = "Heteroepitaxial growth of Cu2ZnSnS4 thin film on sapphire substrate by radio frequency magnetron sputtering",

abstract = "The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) {\^a}€- sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [20{\=1}] {\^a}€- sapphire [2{\=1}{\=1}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.",

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T1 - Heteroepitaxial growth of Cu2ZnSnS4 thin film on sapphire substrate by radio frequency magnetron sputtering

AU - Song, Ning

AU - Wang, Yu

AU - Hu, Yicong

AU - Huang, Yidan

AU - Li, Wei

AU - Huang, Shujuan

AU - Hao, Xiaojing

PY - 2014/3/3

Y1 - 2014/3/3

N2 - The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) â€- sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201̄] â€- sapphire [21̄1̄0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

AB - The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) â€- sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201̄] â€- sapphire [21̄1̄0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

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Heteroepitaxial growth of Cu₂ZnSnS₄ thin film on sapphire substrate by radio frequency magnetron sputtering

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