Hexagonal boron nitride as a flexible random laser

W. Maryam; D. Chugh; J. M. Dawes; H. H. Tan

doi:10.1109/ICP46580.2020.9206475

Hexagonal boron nitride as a flexible random laser

W. Maryam^*, D. Chugh, J. M. Dawes, H. H. Tan

^*Corresponding author for this work

MQ Photonics Research Centre

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Random lasing properties were investigated with and without hexagonal boron nitride using rhodamine 6G doped film as the gain medium. Aluminum nitride nanocolumns as scatterers were introduced on top of the hBN layer. A lower threshold of 1.38 mJ/cm2 was achieved in samples containing hBN. Significantly higher threshold was observed when no hBN was present. Results suggest the potential of utilising hBN as an ultrathin flexible substrate for random lasing applications.

Original language	English
Title of host publication	ICP 2020
Subtitle of host publication	IEEE 8th International Conference on Photonics
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	109-110
Number of pages	2
ISBN (Electronic)	9781728105185
DOIs	https://doi.org/10.1109/ICP46580.2020.9206475
Publication status	Published - 1 May 2020
Event	8th IEEE International Conference on Photonics, ICP 2020 - Kota Bharu, Kelantan, Malaysia Duration: 16 May 2020 → 18 May 2020

Conference

Conference	8th IEEE International Conference on Photonics, ICP 2020
Country/Territory	Malaysia
City	Kota Bharu, Kelantan
Period	16/05/20 → 18/05/20

Keywords

flexible laser
hexagonal boron nitride
random lasing

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10.1109/ICP46580.2020.9206475

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title = "Hexagonal boron nitride as a flexible random laser",

abstract = "Random lasing properties were investigated with and without hexagonal boron nitride using rhodamine 6G doped film as the gain medium. Aluminum nitride nanocolumns as scatterers were introduced on top of the hBN layer. A lower threshold of 1.38 mJ/cm2 was achieved in samples containing hBN. Significantly higher threshold was observed when no hBN was present. Results suggest the potential of utilising hBN as an ultrathin flexible substrate for random lasing applications. ",

keywords = "flexible laser, hexagonal boron nitride, random lasing",

author = "W. Maryam and D. Chugh and Dawes, {J. M.} and Tan, {H. H.}",

year = "2020",

month = may,

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doi = "10.1109/ICP46580.2020.9206475",

language = "English",

pages = "109--110",

booktitle = "ICP 2020",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "8th IEEE International Conference on Photonics, ICP 2020 ; Conference date: 16-05-2020 Through 18-05-2020",

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Maryam, W, Chugh, D, Dawes, JM & Tan, HH 2020, Hexagonal boron nitride as a flexible random laser. in ICP 2020: IEEE 8th International Conference on Photonics. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 109-110, 8th IEEE International Conference on Photonics, ICP 2020, Kota Bharu, Kelantan, Malaysia, 16/05/20. https://doi.org/10.1109/ICP46580.2020.9206475

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AU - Maryam, W.

AU - Chugh, D.

AU - Dawes, J. M.

AU - Tan, H. H.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Random lasing properties were investigated with and without hexagonal boron nitride using rhodamine 6G doped film as the gain medium. Aluminum nitride nanocolumns as scatterers were introduced on top of the hBN layer. A lower threshold of 1.38 mJ/cm2 was achieved in samples containing hBN. Significantly higher threshold was observed when no hBN was present. Results suggest the potential of utilising hBN as an ultrathin flexible substrate for random lasing applications.

AB - Random lasing properties were investigated with and without hexagonal boron nitride using rhodamine 6G doped film as the gain medium. Aluminum nitride nanocolumns as scatterers were introduced on top of the hBN layer. A lower threshold of 1.38 mJ/cm2 was achieved in samples containing hBN. Significantly higher threshold was observed when no hBN was present. Results suggest the potential of utilising hBN as an ultrathin flexible substrate for random lasing applications.

KW - flexible laser

KW - hexagonal boron nitride

KW - random lasing

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U2 - 10.1109/ICP46580.2020.9206475

DO - 10.1109/ICP46580.2020.9206475

M3 - Conference proceeding contribution

AN - SCOPUS:85093963648

SP - 109

EP - 110

BT - ICP 2020

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 8th IEEE International Conference on Photonics, ICP 2020

Y2 - 16 May 2020 through 18 May 2020

ER -

Hexagonal boron nitride as a flexible random laser

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