TY - GEN
T1 - High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers
AU - McMahon, Christopher
AU - Kane, D. M.
AU - Toomey, J.
AU - Lawrence, J. S.
N1 - Copyright 2006 IEEE. Reprinted from 2006 International conference on nanoscience and nanotechnology : proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2006
Y1 - 2006
N2 - The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.
AB - The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.
UR - http://www.scopus.com/inward/record.url?scp=48749111611&partnerID=8YFLogxK
U2 - 10.1109/ICONN.2006.340662
DO - 10.1109/ICONN.2006.340662
M3 - Conference proceeding contribution
AN - SCOPUS:48749111611
SN - 1424404533
SN - 9781424404537
SP - 497
EP - 500
BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Y2 - 3 July 2006 through 6 July 2006
ER -