High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers

Christopher McMahon*, D. M. Kane, J. Toomey, J. S. Lawrence

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

6 Citations (Scopus)
80 Downloads (Pure)

Abstract

The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.

Original languageEnglish
Title of host publicationProceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages497-500
Number of pages4
ISBN (Print)1424404533, 9781424404537
DOIs
Publication statusPublished - 2006
Event2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia
Duration: 3 Jul 20066 Jul 2006

Other

Other2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
CountryAustralia
CityBrisbane
Period3/07/066/07/06

Bibliographical note

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