High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers

Christopher McMahon; D. M. Kane; J. Toomey; J. S. Lawrence

doi:10.1109/ICONN.2006.340662

High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers

Christopher McMahon^*, D. M. Kane, J. Toomey, J. S. Lawrence

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

588 Downloads (Pure)

Abstract

The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	497-500
Number of pages	4
ISBN (Print)	1424404533, 9781424404537
DOIs	https://doi.org/10.1109/ICONN.2006.340662
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Other

Other	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

Bibliographical note

Copyright 2006 IEEE. Reprinted from 2006 International conference on nanoscience and nanotechnology : proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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McMahon, C., Kane, D. M., Toomey, J., & Lawrence, J. S. (2006). High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 497-500). Article 4143442 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICONN.2006.340662

@inproceedings{f2fc22aa1d504000950da73e8b709cbb,

title = "High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers",

abstract = "The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3\% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.",

author = "Christopher McMahon and Kane, \{D. M.\} and J. Toomey and Lawrence, \{J. S.\}",

note = "Copyright 2006 IEEE. Reprinted from 2006 International conference on nanoscience and nanotechnology : proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University{\^a}€{\texttrademark}s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.; 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

year = "2006",

doi = "10.1109/ICONN.2006.340662",

language = "English",

isbn = "1424404533",

pages = "497--500",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

McMahon, C, Kane, DM, Toomey, J & Lawrence, JS 2006, High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143442, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 497-500, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340662

High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers. / McMahon, Christopher; Kane, D. M.; Toomey, J. et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2006. p. 497-500 4143442.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers

AU - McMahon, Christopher

AU - Kane, D. M.

AU - Toomey, J.

AU - Lawrence, J. S.

N1 - Copyright 2006 IEEE. Reprinted from 2006 International conference on nanoscience and nanotechnology : proceedings. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2006

Y1 - 2006

N2 - The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.

AB - The frequency of relaxation oscillations in a heavily damped quantum well laser, as a function of injection current, have been measured with an accuracy as good as 0.3% using a new method involving averaging of many, real-time, individual, relaxation oscillation events. This accuracy represents at least a six fold improvement compared to that obtained by the standard RF spectral analysis method applied to the same system. This accuracy enables critical comparison of experimental results with standard theory and suggests systematic variation of the experimental values from expected theory. This motivates further developments in the theory of relaxation oscillations in quantum well semiconductor lasers.

UR - https://www.scopus.com/pages/publications/48749111611

U2 - 10.1109/ICONN.2006.340662

DO - 10.1109/ICONN.2006.340662

M3 - Conference proceeding contribution

AN - SCOPUS:48749111611

SN - 1424404533

SN - 9781424404537

SP - 497

EP - 500

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers

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