High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

P. P T Chen*, K. S A Butcher, E. M. Goldys, T. L. Tansley, K. E. Prince

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    We have observed an "above band-gap" Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscopy and optical transmission measurements were taken for gallium nitride samples of different thickness. From this data we demonstrate that the high energy Urbach like characteristic is related to the presence of an amorphous surface oxide. It is shown to dominate the absorption spectra of thin gallium nitride samples, for which the influence of surface oxidation is strongest.

    Original languageEnglish
    Pages (from-to)342-345
    Number of pages4
    JournalThin Solid Films
    Volume496
    Issue number2
    DOIs
    Publication statusPublished - 21 Feb 2006

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