High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

P. P T Chen; K. S A Butcher; E. M. Goldys; T. L. Tansley; K. E. Prince

doi:10.1016/j.tsf.2005.09.005

High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

P. P T Chen^*, K. S A Butcher, E. M. Goldys, T. L. Tansley, K. E. Prince

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have observed an "above band-gap" Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscopy and optical transmission measurements were taken for gallium nitride samples of different thickness. From this data we demonstrate that the high energy Urbach like characteristic is related to the presence of an amorphous surface oxide. It is shown to dominate the absorption spectra of thin gallium nitride samples, for which the influence of surface oxidation is strongest.

Original language	English
Pages (from-to)	342-345
Number of pages	4
Journal	Thin Solid Films
Volume	496
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.005
Publication status	Published - 21 Feb 2006

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10.1016/j.tsf.2005.09.005

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abstract = "We have observed an {"}above band-gap{"} Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscopy and optical transmission measurements were taken for gallium nitride samples of different thickness. From this data we demonstrate that the high energy Urbach like characteristic is related to the presence of an amorphous surface oxide. It is shown to dominate the absorption spectra of thin gallium nitride samples, for which the influence of surface oxidation is strongest.",

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T1 - High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

AU - Chen, P. P T

AU - Butcher, K. S A

AU - Goldys, E. M.

AU - Tansley, T. L.

AU - Prince, K. E.

PY - 2006/2/21

Y1 - 2006/2/21

N2 - We have observed an "above band-gap" Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscopy and optical transmission measurements were taken for gallium nitride samples of different thickness. From this data we demonstrate that the high energy Urbach like characteristic is related to the presence of an amorphous surface oxide. It is shown to dominate the absorption spectra of thin gallium nitride samples, for which the influence of surface oxidation is strongest.

AB - We have observed an "above band-gap" Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscopy and optical transmission measurements were taken for gallium nitride samples of different thickness. From this data we demonstrate that the high energy Urbach like characteristic is related to the presence of an amorphous surface oxide. It is shown to dominate the absorption spectra of thin gallium nitride samples, for which the influence of surface oxidation is strongest.

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U2 - 10.1016/j.tsf.2005.09.005

DO - 10.1016/j.tsf.2005.09.005

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VL - 496

SP - 342

EP - 345

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -

High energy Urbach characteristic observed for gallium nitride amorphous surface oxide

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