High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

A. G. Davies; S. A. Brown; R. B. Dunford; E. M. Goldys; R. Newbury; R. G. Clark; P. E. Simmonds; J. J. Harris; C. T. Foxon

doi:10.1016/0921-4526(93)90321-V

High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

A. G. Davies^*, S. A. Brown, R. B. Dunford, E. M. Goldys, R. Newbury, R. G. Clark, P. E. Simmonds, J. J. Harris, C. T. Foxon

^*Corresponding author for this work

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6 Citations (Scopus)

Abstract

Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5, the temperature dependence of which is used to define two characteristic temperatures, T_c1 and T_c2. The boundary formed by the lower mapping, T_c1, in the (B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.

Original language	English
Pages (from-to)	56-65
Number of pages	10
Journal	Physica B: Physics of Condensed Matter
Volume	184
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(93)90321-V
Publication status	Published - 1993
Externally published	Yes

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Davies, A. G., Brown, S. A., Dunford, R. B., Goldys, E. M., Newbury, R., Clark, R. G., Simmonds, P. E., Harris, J. J., & Foxon, C. T. (1993). High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition. Physica B: Physics of Condensed Matter, 184(1-4), 56-65. https://doi.org/10.1016/0921-4526(93)90321-V

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title = "High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition",

abstract = "Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5, the temperature dependence of which is used to define two characteristic temperatures, Tc1 and Tc2. The boundary formed by the lower mapping, Tc1, in the (B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.",

author = "Davies, {A. G.} and Brown, {S. A.} and Dunford, {R. B.} and Goldys, {E. M.} and R. Newbury and Clark, {R. G.} and Simmonds, {P. E.} and Harris, {J. J.} and Foxon, {C. T.}",

year = "1993",

doi = "10.1016/0921-4526(93)90321-V",

language = "English",

volume = "184",

pages = "56--65",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

Davies, AG, Brown, SA, Dunford, RB, Goldys, EM, Newbury, R, Clark, RG, Simmonds, PE, Harris, JJ & Foxon, CT 1993, 'High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition', Physica B: Physics of Condensed Matter, vol. 184, no. 1-4, pp. 56-65. https://doi.org/10.1016/0921-4526(93)90321-V

TY - JOUR

T1 - High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

AU - Davies, A. G.

AU - Brown, S. A.

AU - Dunford, R. B.

AU - Goldys, E. M.

AU - Newbury, R.

AU - Clark, R. G.

AU - Simmonds, P. E.

AU - Harris, J. J.

AU - Foxon, C. T.

PY - 1993

Y1 - 1993

N2 - Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5, the temperature dependence of which is used to define two characteristic temperatures, Tc1 and Tc2. The boundary formed by the lower mapping, Tc1, in the (B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.

AB - Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5, the temperature dependence of which is used to define two characteristic temperatures, Tc1 and Tc2. The boundary formed by the lower mapping, Tc1, in the (B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.

UR - http://www.scopus.com/inward/record.url?scp=0027544205&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90321-V

DO - 10.1016/0921-4526(93)90321-V

M3 - Article

AN - SCOPUS:0027544205

SN - 0921-4526

VL - 184

SP - 56

EP - 65

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

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