High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

A. G. Davies*, S. A. Brown, R. B. Dunford, E. M. Goldys, R. Newbury, R. G. Clark, P. E. Simmonds, J. J. Harris, C. T. Foxon

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5, the temperature dependence of which is used to define two characteristic temperatures, Tc1 and Tc2. The boundary formed by the lower mapping, Tc1, in the (B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.

Original languageEnglish
Pages (from-to)56-65
Number of pages10
JournalPhysica B: Physics of Condensed Matter
Volume184
Issue number1-4
DOIs
Publication statusPublished - 1993
Externally publishedYes

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