The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2002|