High mobility nitrides

K. Scott; A. Butcher; Marie Wintrebert-Fouquet; Patrick P T Chen; Trevor L. Tansley; Surapon Srikeaw

High mobility nitrides

K. Scott, A. Butcher, Marie Wintrebert-Fouquet, Patrick P T Chen, Trevor L. Tansley, Surapon Srikeaw

Research output: Contribution to journal › Article › peer-review

Abstract

The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.

Original language	English
Pages (from-to)	341-346
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002

Cite this

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title = "High mobility nitrides",

abstract = "The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.",

author = "K. Scott and A. Butcher and Marie Wintrebert-Fouquet and Chen, {Patrick P T} and Tansley, {Trevor L.} and Surapon Srikeaw",

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AU - Scott, K.

AU - Butcher, A.

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AU - Tansley, Trevor L.

AU - Srikeaw, Surapon

PY - 2002

Y1 - 2002

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AB - The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.

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JO - Materials Research Society Symposium - Proceedings

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High mobility nitrides

Abstract

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