High peak power actively Q-switched Ho3+, Pr3+-co-doped fluoride fibre laser

T. Hu; D. D. Hudson; S. D. Jackson

doi:10.1049/el.2013.0134

High peak power actively Q-switched Ho3+, Pr3+-co-doped fluoride fibre laser

T. Hu, D. D. Hudson, S. D. Jackson

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An actively Q-switched diode-pumped Ho³⁺, Pr³⁺-co- doped fluoride glass fibre laser operating in the first-order diffraction mode is demonstrated. At a repetition a rate of 1 kHz, the laser produces pulses with a maximum peak power of 576 W and a pulse width of 33 ns at an average power of 19 mW at 2.87 μm.

Original language	English
Pages (from-to)	766-767
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	12
DOIs	https://doi.org/10.1049/el.2013.0134
Publication status	Published - 6 Jun 2013
Externally published	Yes

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title = "High peak power actively Q-switched Ho3+, Pr3+-co-doped fluoride fibre laser",

abstract = "An actively Q-switched diode-pumped Ho3+, Pr3+-co- doped fluoride glass fibre laser operating in the first-order diffraction mode is demonstrated. At a repetition a rate of 1 kHz, the laser produces pulses with a maximum peak power of 576 W and a pulse width of 33 ns at an average power of 19 mW at 2.87 μm.",

author = "T. Hu and Hudson, {D. D.} and Jackson, {S. D.}",

year = "2013",

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AU - Hudson, D. D.

AU - Jackson, S. D.

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Y1 - 2013/6/6

N2 - An actively Q-switched diode-pumped Ho3+, Pr3+-co- doped fluoride glass fibre laser operating in the first-order diffraction mode is demonstrated. At a repetition a rate of 1 kHz, the laser produces pulses with a maximum peak power of 576 W and a pulse width of 33 ns at an average power of 19 mW at 2.87 μm.

AB - An actively Q-switched diode-pumped Ho3+, Pr3+-co- doped fluoride glass fibre laser operating in the first-order diffraction mode is demonstrated. At a repetition a rate of 1 kHz, the laser produces pulses with a maximum peak power of 576 W and a pulse width of 33 ns at an average power of 19 mW at 2.87 μm.

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JO - Electronics Letters

JF - Electronics Letters

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